DMNH6042SPSQ-13

$0.98

Description：MOSFET N-CH 60V 24A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cfc3d8d5b776 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 24A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.9W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6042SPSQ-13

Overview

The DMNH6042SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 surface-mount package and supports junction temperatures up to +175°C. The device provides a drain-source voltage rating of 60V, with a maximum continuous drain current of 24A at 25°C case temperature. Static on-resistance is rated at a maximum of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V. Total gate charge reaches 8.8nC at VGS=10V.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Features 100% unclamped inductive switching testing for robust end-application reliability.
Low gate charge characteristics minimize switching losses during operation.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 2500 units. Confirm that the component meets RoHS 3 compliance and halogen-free requirements for your assembly process. Ensure design compatibility with the PowerDI5060-8 footprint dimensions and thermal pad layout specifications provided in the datasheet.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET is required for high-temperature engine or body control modules. The low on-resistance minimizes conduction losses, while the 60V rating suits standard 12V and 24V automotive electrical architectures. Verify that the 24A continuous current rating aligns with the peak load requirements of the target DC-DC converter circuit.

Part Context

This part belongs to the DMNH series of automotive MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which integrates multiple drain pins for improved thermal dissipation compared to traditional packages. The series is designed specifically for IATF 16949 certified manufacturing facilities to ensure consistent quality for automotive supply chains.

Replacement Considerations

Check the DMNH6042SK3Q-13 for a DPAK-3 (TO-252-3) package alternative within the same family. Verify pinout compatibility and thermal resistance differences before substituting into existing board layouts.