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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 16.7A 8SOIC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：16.7A (Tc)
- Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：584pF @ 25V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMNH6042SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V. Continuous drain current reaches 16.7A at TC=+25°C, with a pulsed drain current capability of 35A. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing for robust end applications
- Designed to minimize power losses through low RDS(ON) and switching losses via low Qg
- Qualified to AEC-Q101 standards for automotive-grade reliability
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the SO-8 package with tape and reel packaging containing 2,500 units per reel. Confirm that the component meets RoHS compliance and is halogen and antimony free as specified in the manufacturer's documentation. Ensure the application environment supports the rated thermal characteristics and operating temperature range.
Selection Notes
Select this component when a dual N-channel configuration is required within an SO-8 footprint. It is appropriate for designs needing high efficiency and superior switching performance alongside low on-state resistance. Consider the thermal resistance values and power dissipation limits relative to the expected load currents and ambient conditions.
Part Context
This part belongs to the DMNH series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes an SO-8 case constructed from molded plastic with a matte tin annealed finish over a copper leadframe. The device is designed to provide high reliability and is intended for surface mount assembly on FR-4 substrates.
Replacement Considerations
The datasheet notes that an automotive-compliant version is available under the separate part number DMNH6042SSDQ. Verify pinout compatibility and electrical specifications before substituting with other dual N-channel MOSFETs in similar packages.
