DMNH6065SPDW-13

$0.32

Description：MOSFET 2N-CH 60V 27A PWRDI50
Series：-

SKU:b2ce8d1ab9fa Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 27A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：27A (Tc)
Rds On (Max) @ Id, Vgs：65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：466pF @ 25V
Power - Max：2.4W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type R)
Grade：-
Qualification：-

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DMNH6065SPDW-13

Overview

The DMNH6065SPDW-13 is a dual N-channel enhancement mode MOSFET array from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 27A at case temperature +25°C. The maximum on-resistance (Rds(on)) is 65mΩ at Vgs=10V and 15A. Total power dissipation is rated at 2.4W at ambient temperature +25°C and 68W at case temperature +25°C. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Features wettable flank technology to facilitate improved optical inspection during assembly.
Undergoes 100% unclamped inductive switching (UIS) testing in production.
Compliant with RoHS directives and manufactured as a halogen and antimony-free green device.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units per the manufacturer's documentation. Confirm that the standard commercial grade part aligns with project requirements, noting that automotive-grade variants with Q-suffixes are available under separate datasheets if AEC-Q qualification or PPAP capability is necessary.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. The low input capacitance supports superior switching performance, while the high thermal rating allows for efficient heat dissipation. Ensure the application gate drive voltage meets the minimum threshold for optimal Rds(on) characteristics.

Part Context

This device belongs to the DMNH series of dual N-channel MOSFET arrays designed by Diodes Incorporated. It utilizes the PowerDI5060-8 case style, which integrates exposed drain pads for enhanced thermal transfer. The product line emphasizes minimizing on-state resistance without compromising switching speed for modern power management needs.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade part DMNH6065SPDWQ. Verify pinout compatibility and thermal resistance specifications when substituting with other dual N-channel MOSFETs in the same package family.

FAQ

Is the DMNH6065SPDW-13 qualified for automotive applications?

No, this specific part number is the standard commercial grade. Automotive applications requiring AEC-Q qualification should use the DMNH6065SPDWQ variant.