DMNH6065SSD-13

$0.33

Description：MOSFET 2N-CH 60V 3.8A 8SO
Series：-

SKU:a96f35d8da26 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：446pF @ 30V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

Download product information

DMNH6065SSD-13

Overview

The DMNH6065SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 3.8A at +25°C. The device exhibits a maximum on-resistance of 65mΩ at VGS=10V and 88mΩ at VGS=4.5V. Packaged in an SO-8 case, it supports junction temperatures up to +175°C with a total power dissipation of 1.5W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Rated for operation in high ambient temperature environments up to +175°C.
Subjected to 100% unclamped inductive switch (UIS) testing during production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm exact electrical parameters and package dimensions. Ensure compliance with RoHS directives and confirm suitability for intended operating temperatures. Cross-reference datasheet revision numbers to validate technical specifications before integration into designs.

Selection Notes

Select this component for circuits requiring low on-resistance and fast switching capabilities within a 60V rating. Consider the thermal characteristics and SO-8 packaging constraints when designing heat dissipation strategies. Evaluate gate threshold requirements against driver capabilities to ensure optimal conduction states.

Part Context

This component belongs to the DMNH6065 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 surface mount package. The device is designed for general-purpose power management tasks where compact size and efficient switching are prioritized.