DMNH6065SSDQ-13

$0.37

Description：MOSFET 2N-CH 60V 3.8A 8SO
Series：-

SKU:6de6a7b49cae Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：446pF @ 30V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMNH6065SSDQ-13

Overview

The DMNH6065SSDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 65mΩ at VGS=10V and 88mΩ at VGS=4.5V, with a continuous drain current of 3.8A at 25°C. Packaged in an SO-8 case, it is AEC-Q101 qualified and PPAP capable.

Feature Summary

Qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities for specific automotive change control requirements.
Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
Undergoes 100% unclamped inductive switching (UIS) testing during production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS43036 Rev. 2-2. Confirm that the part number suffix matches the required tape and reel packaging configuration. Ensure compliance with RoHS 3 directives and verify that the supplier sources from authorized channels to guarantee authenticity and traceability.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs with high thermal stability. It is appropriate for systems operating in elevated temperature conditions where standard commercial grade parts may fail. Consider its low input capacitance and fast switching speed for efficient power management designs.

Part Context

This component belongs to the DMNH60 series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are specifically engineered to meet the rigorous demands of the automotive industry, offering robust performance characteristics and reliability under harsh environmental conditions.