DMP1005UFDF-7

DMP1005UFDF-7

$0.58
  • Description:MOSFET P-CH 12V 26A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:837f476e012e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 12V 26A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:47 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:2475 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (Type F)
  • Package / Case:6-UDFN Exposed Pad

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DMP1005UFDF-7

Overview

The DMP1005UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source voltage (BVDSS) and an ultra-low on-resistance of 8.5mΩ at VGS = -4.5V. The device supports a continuous drain current of -26A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6mm profile, it offers high efficiency power management capabilities.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications
  • Features a low gate threshold voltage suitable for low-voltage drive systems
  • Includes ESD protection up to 8kV and utilizes a totally lead-free, RoHS compliant green molding compound

Applications

  • Battery Management Systems
  • Power Management Functions
  • Load Switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets AEC-Q101 automotive qualification requirements if intended for automotive use, as standard production may differ from qualified automotive lots. Ensure compliance with halogen and antimony-free specifications.

Selection Notes

Select this component for designs requiring a compact footprint with a PCB area of only 4mm². It is appropriate for applications needing fast switching speeds and low input capacitance. Consider the thermal resistance characteristics when designing heat dissipation paths for steady-state operations exceeding ambient temperatures.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is housed in the U-DFN2020-6 package type, which provides a low-profile solution ideal for space-constrained surface mount applications. The device is designed to replace older technologies in portable electronics and power management circuits.

Replacement Considerations

DMP1005UFDF-13

FAQ

What is the maximum avalanche energy rating for this device?

The maximum avalanche energy (EAS) is rated at 20 mJ with an inductance of 0.1mH.

Does the DMP1005UFDF-7 support reverse recovery characteristics?

Yes, the datasheet specifies a reverse recovery time (tRR) of 115 ns and a reverse recovery charge (QRR) of 75 nC.

DMP1005UFDF-7DMP1005UFDF-7
$0.58
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