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The DMP1005UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source voltage (BVDSS) and an ultra-low on-resistance of 8.5mΩ at VGS = -4.5V. The device supports a continuous drain current of -26A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6mm profile, it offers high efficiency power management capabilities.
Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets AEC-Q101 automotive qualification requirements if intended for automotive use, as standard production may differ from qualified automotive lots. Ensure compliance with halogen and antimony-free specifications.
Select this component for designs requiring a compact footprint with a PCB area of only 4mm². It is appropriate for applications needing fast switching speeds and low input capacitance. Consider the thermal resistance characteristics when designing heat dissipation paths for steady-state operations exceeding ambient temperatures.
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is housed in the U-DFN2020-6 package type, which provides a low-profile solution ideal for space-constrained surface mount applications. The device is designed to replace older technologies in portable electronics and power management circuits.
DMP1005UFDF-13
The maximum avalanche energy (EAS) is rated at 20 mJ with an inductance of 0.1mH.
Yes, the datasheet specifies a reverse recovery time (tRR) of 115 ns and a reverse recovery charge (QRR) of 75 nC.