DMP1009UFDFQ-13

$0.16

Description：MOSFET P-CH 12V 11A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:679aef109ba6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 11A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：11mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1009UFDFQ-13

Overview

The DMP1009UFDFQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage and a maximum continuous drain current of -11A at +25°C. The device offers low on-resistance, reaching 11mΩ at VGS = -4.5V. It is housed in a U-DFN2020-6 package with a 0.6mm profile. Qualified to AEC-Q101 standards, it supports battery management, power management functions, and DC-DC converters.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
Low on-resistance for efficient power handling
Fast switching speed capabilities
PPAP capable for automotive production requirements

Applications

Battery Management Applications
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets all necessary automotive qualification standards for the intended application environment. Ensure compatibility with the designated PCB footprint layout to maintain thermal performance specifications.

Selection Notes

Select this component for designs requiring a compact form factor with a 0.6mm profile. Evaluate the gate threshold voltage characteristics against the driving circuit logic levels. Consider the thermal resistance values when determining heat dissipation requirements for the target operating temperature range.

Part Context

This part belongs to the DMP1009 series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6 (Type F) case configuration. The product line is engineered to meet stringent automotive industry requirements while maintaining a small PCB footprint.