DMP1009UFDFQ-7

$0.61

Description：MOSFET P-CH 12V 11A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2dd5699b704e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 11A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：11mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1009UFDFQ-7

Overview

The DMP1009UFDFQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage and an on-resistance of 11mΩ at VGS=-4.5V. The device supports a continuous drain current of -11A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it meets AEC-Q101 standards and includes PPAP capability.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
PPAP capable for automotive production requirements
Low profile 0.6mm package ideal for space-constrained designs
100% unclamped inductive switching tested in production

Applications

Battery Management Applications
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity before procurement. Confirm that the component meets the necessary automotive quality standards for the intended application environment. Ensure compatibility with the specified U-DFN2020-6 footprint during the design phase.

Selection Notes

Select this component when low on-resistance and fast switching speeds are required in compact automotive designs. The AEC-Q101 qualification makes it suitable for demanding environments. Consider the thermal resistance values provided in the datasheet for proper heat dissipation planning on FR-4 substrates.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes a U-DFN2020-6 surface mount package. The product is manufactured using silicon technology and is fully RoHS compliant. It represents a specialized solution for automotive-grade power switching applications requiring small footprints.