DMP1011LFV-13

$0.23

Description：MOSFET P-CH 12V 19A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:153b61ad9a11 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 19A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：11.7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 6 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：913 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：2.16W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP1011LFV-13

Overview

The DMP1011LFV-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source breakdown voltage and a maximum continuous drain current of -19A at TC = +25°C. The device offers a typical on-resistance of 9.8mΩ at VGS = -4.5V and 14.6mΩ at VGS = -2.5V. It utilizes the PowerDI3333-8 package, providing a small form factor with thermal efficiency. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-state resistance minimizes conduction losses for high-efficiency power management.
PowerDI3333-8 package occupies significantly less board area compared to traditional SO-8 packages.
ESD protection rated up to 3kV for enhanced reliability.
Qualified to AEC-Q101 standards for automotive high-reliability applications.

Applications

Backlighting circuits
DC-DC converters
General power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the PowerDI3333-8 (Type UX) case dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end product design constraints.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage P-channel switching. The device is suitable for designs prioritizing board space reduction due to its minimal footprint relative to standard packages. Evaluate thermal performance based on the specified junction-to-ambient resistance values under expected load conditions.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance. The family targets applications demanding high density and efficiency in power management systems.

Replacement Considerations

Review datasheets for alternative P-channel MOSFETs with compatible -12V ratings and similar RDS(ON) characteristics. Verify pinout compatibility and package dimensions before substituting to ensure mechanical fit and electrical equivalence.