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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 6 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：913 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.05W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMP1011LFVQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source breakdown voltage and a maximum continuous drain current of -19A at TC = +25°C. The device offers a typical on-resistance (RDS(ON)) of 9.8mΩ at VGS = -4.5V and 14.6mΩ at VGS = -2.5V. Packaged in a PowerDI3333-8 case, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Occupies only 33% of the board area compared to SO-8 packages, enabling smaller end products with higher density.
- Qualified to AEC-Q101 standards and supported by PPAP for automotive applications requiring specific change control.
- Features ESD protection up to 3kV and utilizes a thermally efficient package.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the component against the official datasheet DS42609 Rev. 1-2 to confirm electrical parameters and mechanical dimensions. Ensure the ordering suffix matches the required packaging quantity, as the -13 suffix indicates a 3,000-unit tape and reel configuration. Confirm compliance with RoHS and halogen-free requirements if specified for your application.
Selection Notes
Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. It is suitable for designs requiring low on-resistance at standard gate drive voltages like -4.5V or -2.5V. Consider its AEC-Q101 qualification if the target environment involves automotive-grade reliability standards.
Part Context
This part belongs to Diodes Incorporated's portfolio of surface-mount MOSFETs designed for modern electronics. The PowerDI series focuses on reducing board space while improving thermal performance. The DMP1011LFVQ specifically targets applications needing robust P-channel switching capabilities in a highly miniaturized form factor.
Replacement Considerations
Consult the manufacturer's documentation for direct substitutes. Verify that any alternative maintains the same -12V rating, similar RDS(ON) characteristics, and compatible PowerDI3333-8 pinout to ensure seamless integration without PCB redesign.
FAQ
What is the maximum continuous drain current for the DMP1011LFVQ?
The maximum continuous drain current is -19A at a case temperature of +25°C and -15A at a case temperature of +70°C.
Is the DMP1011LFVQ suitable for automotive applications?
Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications requiring specific change control.
