DMP1012UCB9-7

$0.26

Description：MOSFET P-CH 8V 10A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2770cfa21fec Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 8V 10A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：890mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-WLB1515-9
Package / Case：9-UFBGA, WLBGA

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DMP1012UCB9-7

Overview

The DMP1012UCB9-7 is a P-channel enhancement mode MOSFET utilizing third-generation LD-MOS technology. It features an -8V drain-source voltage (VDSS) and a typical on-resistance of 8.2mΩ at VGS = -4.5V. The device supports a continuous drain current of -10A at +25°C and includes a gate threshold voltage of -0.8V. Packaged in a U-WLB1515-9 chip-scale format measuring 1.5mm x 1.5mm with a height of 0.62mm, it offers low thermal impedance and high power density.

Feature Summary

LD-MOS technology engineered to minimize on-state losses and enable ultra-fast switching
Chip-Scale Package (CSP) design combining low thermal impedance with minimal footprint area
Low turn-on potential achieved through a typical gate threshold voltage of -0.8V
ESD protection rated at 6kV HBM for the gate terminal

Applications

DC-DC Converters
Battery Management Systems
Load Switches

Procurement Notes

Verify component authenticity by checking the marking code against the official Diodes Incorporated date code key. Confirm the package type matches the U-WLB1515-9 specification. Ensure compliance with RoHS and AEC-Q101 standards if required for your specific application environment. Review the datasheet revision history for any updates to electrical characteristics or mechanical dimensions before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds within a compact form factor. Consider the -8V rating and 8.2mΩ on-resistance for low-voltage power management circuits. Evaluate the thermal resistance values based on your PCB copper area and ambient temperature conditions. Note that the device is not recommended for new designs; assess alternative options during the selection phase.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes advanced lateral MOSFET technology optimized for power density. The U-WLB1515-9 package represents a chip-scale solution designed to maximize performance per unit area compared to traditional surface-mount packages.