DMP1012USS-13

$0.14

Description：MOSFET BVDSS: 8V-24V SO-8 T&R 2.
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:26faeb6b5172 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V-24V SO-8 T&R 2.
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：15mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1344 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DMP1012USS-13

Overview

The DMP1012USS-13 is a 12V P-channel enhancement mode MOSFET in an SO-8 package. It features a maximum drain-source voltage of -12V and gate-source voltage of ±8V. At VGS = -4.5V, the on-resistance is 15mΩ with a continuous drain current of -8.5A. The device supports pulsed drain currents up to -40A and has a junction temperature range of -55°C to +150°C. Total power dissipation is 1.3W at 25°C ambient.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor Control
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration as documented. Confirm that the component meets the required environmental standards for halogen and antimony content if specified by your design constraints. Ensure the SO-8 package dimensions align with your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring efficient power management with moderate current handling capabilities. The low on-resistance makes it suitable for minimizing conduction losses in DC-DC converters. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-duty cycle operations.

Part Context

This part belongs to Diodes Incorporated's line of P-channel MOSFETs designed for general-purpose switching applications. The DMP1012USS variant specifically targets efficiency improvements through reduced on-resistance. It is manufactured using advanced semiconductor processes to ensure reliability and performance consistency across production batches.

Replacement Considerations

No public confirmed substitute part numbers are provided in the source documentation. Verify compatibility with existing circuit designs if considering alternative components from other manufacturers.