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Product Detailed Parameters
- Description：MOSFET P-CH 12V 7.6A U-WLB1515-9
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：18mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.9 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：457 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1515-9
- Package / Case：9-UFBGA, WLBGA
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Overview
The DMP1018UCB9-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 12V drain-source breakdown voltage and supports a continuous drain current of 7.6A. The device utilizes U-WLB1515-9 packaging technology. Key electrical parameters include a power dissipation rating of 1W and an operating temperature range spanning from -55°C to +150°C. This component is designed for surface-mount applications requiring efficient switching capabilities within low-voltage environments.
Feature Summary
- P-channel enhancement mode operation
- Low voltage 12V specification
- High current handling capability
- Extended thermal operating range
Applications
- Low voltage DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm availability through authorized distributors or secondary market channels, as standard manufacturing supply may be discontinued. Ensure that any replacement components meet identical electrical specifications and package dimensions to maintain circuit integrity without redesign.
Selection Notes
Select this component for designs requiring a compact P-channel switch with moderate current capacity. The U-WLB1515-9 package offers a small footprint suitable for space-constrained layouts. Consider the 1W power dissipation limit when designing thermal management solutions. Verify compatibility with control logic levels and ensure the 12V rating aligns with the system's maximum voltage requirements.
Part Context
This MOSFET belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the field-effect transistor category. It serves as a switching element in power electronics, distinct from linear regulators or diodes produced by the same manufacturer. The component represents a solution for low-side or high-side switching applications where size and efficiency are critical design factors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status indicated in external sources, direct replacements must be identified based on matching electrical parameters and package type rather than official cross-reference lists.
