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Product Detailed Parameters
- Description：MOSFET P-CH 12V 9.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：16mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42.6 nC @ 5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2953 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP1022UFDE-7 is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -12V Drain-Source Voltage (BVDSS) and a maximum continuous drain current of -9.1A at +25°C. The device exhibits a low on-state resistance, with RDS(ON) specified as 16mΩ at VGS = -4.5V and ID = -8.2A. It operates within a temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 (Type E) package.
Feature Summary
- Designed specifically for battery management applications
- Features a 0.6mm profile ideal for low profile applications
- ESD protected to 3KV
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- Battery management systems
- Low profile electronic designs
- Automotive electronics requiring high reliability
Procurement Notes
Verify the component revision and datasheet number DS35477 Rev. 12 - 3 when sourcing. Confirm that the ordering suffix '-7' corresponds to the standard reel quantity and packaging details provided in the manufacturer's documentation. Ensure compatibility with the specified U-DFN2020-6 footprint during procurement planning.
Selection Notes
Select this component for applications requiring a compact P-Channel MOSFET with a -12V rating. Consider the thermal characteristics and power dissipation limits based on the specific PCB layout and copper area available. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable switching performance.
Part Context
This part belongs to the DMP1022 series of P-Channel Enhancement Mode MOSFETs from Diodes Incorporated. It is designed to offer low on-resistance and fast switching speeds suitable for power management tasks. The device is housed in a lead-free, RoHS-compliant U-DFN2020-6 package.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and advises using DMP1005UFDF instead. Verify if the automotive-compliant variant DMP1022UFDEQ is required for specific reliability standards.
