DMP1022UFDEQ-7

$0.75

Description：MOSFET P-CH 12V 9.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dd3a3645890b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 9.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42.6 nC @ 5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2953 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP1022UFDEQ-7

Overview

The DMP1022UFDEQ-7 is a single-channel P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device offers a maximum on-resistance of 16mΩ at VGS = -4.5V, supporting a continuous drain current of -9.1A at TA = +25°C. Packaged in a U-DFN2020-6 (Type E) case with a 0.6mm profile, it includes an internal gate protection diode and meets AEC-Q101 standards.

Feature Summary

Qualified to AEC-Q101 standards for high reliability and PPAP capable
Features a low 0.6mm profile ideal for space-constrained designs
Includes internal gate protection diode for enhanced robustness
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Engine Management Systems
DC-DC Converters
Body Control Electronics

Procurement Notes

Verify the specific ordering suffix '-7' indicates a 3,000-unit reel quantity per the manufacturer's documentation. Confirm that the 'E' designation in the package type corresponds to the U-DFN2020-6 form factor. Ensure compliance requirements match the specified green material definitions regarding bromine, chlorine, and antimony limits.

Selection Notes

Select this component when a low-profile P-channel MOSFET is required for automotive environments. The device supports operation up to 150°C junction temperature. Verify thermal management needs against the 61°C/W thermal resistance value provided for standard FR-4 substrates with thermal vias.

Part Context

This part belongs to Diodes Incorporated's DMP series of power MOSFETs. It utilizes silicon technology and is housed in a molded plastic case classified as UL 94V-0 flammability rated. The terminals are finished with NiPdAu over a copper leadframe to ensure solderability according to MIL-STD-208.