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Product Detailed Parameters
- Description：MOSFET P-CH 12V 9.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：14.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2712 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP1022UFDF-13 is a P-channel enhancement mode MOSFET designed for battery management applications. It features a -12V drain-source voltage and a maximum continuous drain current of -9.5A at +25°C. The device offers a low on-resistance of 14.8mΩ at VGS = -4.5V. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed specifically for use in battery management applications
- Features a 0.6mm profile ideal for low profile applications
- Includes ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Battery management systems
- Low profile electronic designs
- Automotive applications requiring specific change control
Procurement Notes
Verify the exact ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free status, before finalizing procurement decisions.
Selection Notes
Select this component when a compact footprint and low profile are critical constraints. Ensure the application requires a -12V rating and can accommodate the specified thermal resistance values. Verify that the gate drive voltage aligns with the threshold characteristics for optimal switching performance.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 package. The product is classified as a new product within its family line, emphasizing modern manufacturing processes and green material compliance.
Replacement Considerations
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and thermal characteristics.
