DMP1022UFDF-7

$0.64

Description：MOSFET P-CH 12V 9.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fe9758874b5d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 9.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：15.3mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48.3 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2712 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1022UFDF-7

Overview

The DMP1022UFDF-7 is a P-channel enhancement mode MOSFET designed for battery management applications. It features a U-DFN2020-6 package with a 0.6mm profile and a 4mm² footprint. Key electrical parameters include a drain-source voltage of -12V, a continuous drain current of -9.5A at +25°C, and a maximum on-resistance of 14.8mΩ at VGS = -4.5V. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

Low gate threshold voltage for efficient drive control
Fast switching speed capabilities
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Battery management systems
Low profile electronic designs
Automotive applications requiring specific change control

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36624 Rev. 6. Confirm the package type is U-DFN2020-6 (Type F) and ensure compliance with RoHS 3 and halogen-free requirements. Check for automotive qualification status if AEC-Q100/101/200 standards are required for the target application.

Selection Notes

Select this component when a low-profile P-channel MOSFET with high current capability is needed. The 14.8mΩ on-resistance at -4.5V gate drive supports efficient power handling. Ensure the design accommodates the 0.6mm height constraint and utilizes the recommended FR-4 substrate pad layout for optimal thermal performance.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered for compact designs requiring low profile and high efficiency. The U-DFN2020-6 package provides a small footprint suitable for space-constrained PCB layouts while maintaining robust thermal characteristics.

Replacement Considerations

Check for direct substitutes within the DMP series that match the -12V rating and U-DFN2020-6 package. Verify pinout compatibility and thermal resistance values before substitution.