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The DMP1022UWS-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3020-8 case and operates with a drain-source voltage of -12V. The device provides a continuous drain current of -7.2A at +25°C, with a maximum on-resistance of 18mΩ at VGS = -4.5V. It includes an ESD protected gate and supports operating temperatures from -55°C to +150°C.
Verify the specific ordering suffix '-7' against official documentation to confirm the 3000-unit tape and reel packaging format. Ensure the component meets RoHS compliance requirements and matches the specified V-DFN3020-8 package dimensions for your design.
Select this component when a single P-channel MOSFET with low on-resistance and fast switching capabilities is required. Consider the -12V rating and thermal characteristics in V-DFN3020-8 packages for compact power management designs.
This part belongs to the DMP1022UWS series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for applications requiring efficient power control in small form factors.
Consult official datasheets for direct substitutes within the same product family or equivalent specifications. Verify pinout compatibility and electrical ratings before replacing components in existing designs.
The maximum drain-source voltage (VDSS) is rated at -12V.
Yes, the DMP1022UWS features an ESD protected gate structure.