DMP1022UWS-7

DMP1022UWS-7

$0.26
  • Description:MOSFET P-CH 12V 7.2A 8DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:57e4e28f7528 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 12V 7.2A 8DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:2847 pF @ 4 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:V-DFN3020-8
  • Package / Case:8-VDFN

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DMP1022UWS-7

Overview

The DMP1022UWS-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3020-8 case and operates with a drain-source voltage of -12V. The device provides a continuous drain current of -7.2A at +25°C, with a maximum on-resistance of 18mΩ at VGS = -4.5V. It includes an ESD protected gate and supports operating temperatures from -55°C to +150°C.

Feature Summary

  • Low on-resistance for high efficiency power management
  • Fast switching speed with low input capacitance
  • ESD protected gate structure

Applications

  • Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' against official documentation to confirm the 3000-unit tape and reel packaging format. Ensure the component meets RoHS compliance requirements and matches the specified V-DFN3020-8 package dimensions for your design.

Selection Notes

Select this component when a single P-channel MOSFET with low on-resistance and fast switching capabilities is required. Consider the -12V rating and thermal characteristics in V-DFN3020-8 packages for compact power management designs.

Part Context

This part belongs to the DMP1022UWS series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for applications requiring efficient power control in small form factors.

Replacement Considerations

Consult official datasheets for direct substitutes within the same product family or equivalent specifications. Verify pinout compatibility and electrical ratings before replacing components in existing designs.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at -12V.

Does the device include gate protection?

Yes, the DMP1022UWS features an ESD protected gate structure.

DMP1022UWS-7DMP1022UWS-7
$0.26
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