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Product Detailed Parameters
- Description：MOSFET P-CH 12V 2.6A X2-WLB0808
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：535 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：530mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-WLB0808-4 (Type C)
- Package / Case：4-XFBGA, WLBGA
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Overview
The DMP1045UCB4-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an ultra-small X2-WLB0808-4 (Type C) package measuring 0.8mm x 0.8mm. It features a drain-source voltage (V_DSS) of -12V and a continuous drain current (I_D) of -4.8A at +25°C. The device offers low on-state resistance (R_DS(ON)) of 50mΩ max at V_GS = -4.5V and 65mΩ max at V_GS = -2.5V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -0.3V to -1.0V, total gate charge (Q_g) of 6.1nTyp, and input capacitance (C_iss) of 535pTyp.
Feature Summary
- Ultra-small 0.8mm x 0.8mm package design for high-density applications
- Built-in G-S protection diode against electrostatic discharge
- Totally lead-free and fully RoHS compliant construction
Applications
- Portable Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration as documented in the official datasheet. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definitions provided by the manufacturer. Ensure compatibility with the specified X2-WLB0808-4 (Type C) mechanical case outline during PCB layout planning.
Selection Notes
Select this component for designs requiring minimal footprint and efficient power management in portable devices. Consider the thermal characteristics, including junction-to-ambient resistance, when determining heat dissipation requirements. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels. Verify that the maximum ratings, such as drain-source voltage and continuous drain current, align with the operational demands of the target circuit.
Part Context
This part belongs to the DMP1045 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is characterized by low on-state resistance and superior switching performance, targeting high-efficiency power management applications. The DMP1045UCB4 variant specifically utilizes the compact X2-WLB0808-4 package to address space constraints in modern electronic devices.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, electrical parameters, and package dimensions before implementation.
