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Product Detailed Parameters
- Description：MOSFET P-CH 12V 4A SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1357 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP1045UQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage rating and low on-resistance of 31mΩ at VGS = -4.5V, supporting up to -5.2A continuous drain current. The device operates within a junction temperature range of -55°C to +150°C and includes an internal gate protection diode for ESD protection.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low input capacitance and fast switching speed for efficient power management
- Totally lead-free and fully RoHS compliant with halogen and antimony free construction
Applications
- DC-DC converters
- BLDC motors
- Load switches
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration before procurement. Confirm that the component meets the required IATF 16949 manufacturing facility standards for your specific automotive supply chain requirements.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade reliability and low conduction losses. Ensure the thermal design accommodates the specified thermal resistance values under steady-state conditions to maintain safe operating temperatures.
Part Context
Manufactured by Diodes Incorporated, this part belongs to their automotive-grade discrete semiconductor portfolio. It utilizes a SOT23 package to provide a compact footprint suitable for space-constrained electronic control units and power distribution modules in modern vehicles.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(ON) and BVDSS to ensure compatibility with existing circuit designs.
