DMP1070UQ-7

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f9dd0db2392a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：890mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMP1070UQ-7

Overview

The DMP1070UQ-7 is a P-channel enhancement mode MOSFET in an SOT23 package. It features a drain-source voltage of -12V and a continuous drain current of -5.4A at +25°C. The on-resistance is 31mΩ max at VGS=-4.5V and 45mΩ max at VGS=-2.5V. Total gate charge is 11.5nC max. Operating temperature range is -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Suitable for automotive applications requiring specific change control

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the component matches the exact Diodes Incorporated part number DMP1070UQ-7. Confirm the SOT23 package type and AEC-Q101 qualification status if automotive use is required. Check datasheet revision DS43249 Rev. 2 - 2 for accurate electrical limits. Ensure sourcing from authorized channels to guarantee RoHS compliance and lead-free specifications.

Selection Notes

Select this device for low-voltage, high-current applications requiring fast switching. The -12V rating suits 5V or 3.3V logic systems. Consider thermal resistance values when designing PCB layouts. Verify gate drive voltage levels against the specified RDS(ON) conditions to ensure optimal performance and efficiency in the target circuit design.

Part Context

This component belongs to the DMP series of P-channel MOSFETs by Diodes Incorporated. It utilizes advanced silicon technology to minimize on-state resistance while maintaining superior switching performance. The device is designed for surface-mount assembly in compact electronic designs requiring efficient power handling capabilities.