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Product Detailed Parameters
- Description：MOSFET P-CH 12V 2.6A U-WLB1010-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：102mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.7 nC @ 4.5 V
- Vgs (Max)：-5V
- Input Capacitance (Ciss) (Max) @ Vds：251 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1010-4
- Package / Case：4-UFBGA, WLBGA
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Overview
The DMP1096UCB4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 12 V and a continuous drain current of 2.6 A at ambient temperature. The device dissipates up to 820 mW of power and operates within a junction temperature range extending to +150 °C. Packaged in a surface-mount U-WLB1010-4 (UFCSP) format, it offers low thermal resistance suitable for compact designs.
Feature Summary
- P-channel enhancement mode architecture optimized for low conduction losses
- Ultra-fast switching characteristics with typical fall time of 32.3 ns
- Chip-scale package design enabling high power density through minimal footprint
Applications
- Portable electronic devices requiring efficient power management
- Battery-powered systems utilizing low-voltage DC-DC conversion
- Load switching applications in consumer electronics
Procurement Notes
Verify the specific ordering suffix and package variant against official Diodes Incorporated documentation before procurement. Confirm that the component meets all electrical specifications required for your circuit design, particularly regarding thermal performance and voltage ratings. Ensure compatibility with your manufacturing process for the specified surface-mount package.
Selection Notes
Select this component when a small form factor P-channel MOSFET is required for low-voltage applications. Consider its 12 V rating and 2.6 A current capability relative to load requirements. Evaluate the thermal constraints imposed by the 820 mW dissipation limit and the U-WLB1010-4 package size to ensure adequate heat dissipation in the final assembly.
Part Context
This part belongs to Diodes Incorporated's portfolio of single N-channel and P-channel MOSFETs designed for portable electronics. The DMP series utilizes advanced lateral DMOS technology to achieve low on-resistance and fast switching speeds. These components are engineered to replace larger packages while maintaining or improving electrical performance in space-constrained environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers. Consult official Diodes Incorporated documentation for recommended replacements or updated product line information.
