DMP10H088SPS-13

$0.26

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:640c2bcaa01e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：83mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP10H088SPS-13

Overview

The DMP10H088SPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -100V drain-source voltage rating and an 83mΩ maximum on-resistance at VGS = -10V. The device supports a continuous drain current of -20A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a PowerDI5060-8/SWP (Type UX) surface-mount format, it includes wettable flanks for optical inspection and is RoHS compliant.

Feature Summary

Designed for high-efficiency power management with minimized on-state losses
Features wettable flank technology for improved optical inspection reliability
Includes 100% unclamped inductive switching (UIS) testing in production

Applications

Active clamp switches
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per manufacturer specifications. Confirm that the component meets required environmental standards, including RoHS 3 compliance and Halogen/Antimony-free definitions, prior to final procurement integration.

Selection Notes

Select this component for applications requiring a compact P-channel switch with low input capacitance and fast switching speeds. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics when designing heat dissipation paths for steady-state or pulsed current loads.

Part Context

This part belongs to the DMTH/DMP series of enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP package, which provides a robust surface-mount solution designed to balance electrical performance with thermal management capabilities in space-constrained electronic designs.