DMP10H088SPSW-13

$0.26

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:44bb20032bed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：83mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP10H088SPSW-13

Overview

The DMP10H088SPSW-13 is a 100V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package and features an on-resistance of 83mΩ at VGS=-10V/-20A, or 89mΩ at VGS=-6V/-19A. The device supports a continuous drain current of -20A at TC=+25°C and withstands a pulsed drain current of -80A. Electrical characteristics include a gate threshold voltage range of -2.0V to -4.0V, total gate charge of 27.7nC at VGS=-10V, and a maximum junction temperature of +150°C.

Feature Summary

Wettable flank design for improved optical inspection capabilities
High conversion efficiency with minimized on-state losses
Fast switching speed supported by low input capacitance
100% Unclamped Inductive Switch (UIS) tested in production

Applications

Active clamp switches
Load switches
High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the selected variant matches the required PowerDI5060-8/SWP package type for proper PCB footprint compatibility.

Selection Notes

Select this component when a compact P-channel solution is required for high-efficiency power management. The device offers superior switching performance alongside low RDS(ON). Consider the thermal resistance values and operating temperature range when designing heat dissipation strategies for the target application environment.

Part Context

This part belongs to the DMP10H088SPSW series from Diodes Incorporated. It is designed as a new generation enhancement mode MOSFET intended to minimize RDS(ON) while maintaining fast switching speeds. The product line targets high-efficiency power management applications requiring robust performance in a small form factor.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before replacing the component in existing designs.