DMP10H400SE-13

$0.66

Description：MOSFET P-CH 100V 2.3A/6A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:82fd25865caf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 2.3A/6A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：250mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1239 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 13.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

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DMP10H400SE-13

Overview

The DMP10H400SE-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -100 V and a continuous drain current (I_D) of -2.3 A at +25°C ambient temperature, or -6.0 A at +25°C case temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 250 mΩ at V_GS = -10 V and -5 A, and 300 mΩ at V_GS = -4.5 V and -5 A. Total gate charge (Q_g) is 17.5 nC at V_GS = -10 V. Thermal resistance from junction to case (R_θJC) is 9.1 °C/W, with a total power dissipation of 13.7 W at +25°C case temperature. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a "Green" device.

Applications

Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental specifications, including RoHS compliance and halogen/antimony-free status. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C. Cross-reference the datasheet revision DS37841 Rev. 3 to ensure all electrical characteristics match design requirements.

Selection Notes

Select this component when a P-channel MOSFET with a -100 V breakdown voltage is required. Consider the R_DS(ON) values at both -10 V and -4.5 V gate drive voltages to determine suitability for low gate drive applications. Evaluate the thermal resistance and power dissipation capabilities against the expected load current and ambient conditions. Verify compatibility with the SOT-223 package footprint and pad layout dimensions provided in the mechanical data section.

Part Context

This part belongs to the DMP10 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'SE' designation indicates the standard commercial grade version packaged in an SOT-223 case. The '-13' suffix specifies the bulk tape and reel packaging format. An automotive-compliant variant, DMP10H400SEQ, is available under a separate datasheet for applications requiring stricter qualification standards.

Replacement Considerations

The DMP10H400SEQ is documented as an automotive-compliant alternative within the same family. Verify pinout compatibility and thermal characteristics before substitution. No other direct substitutes are confirmed in the provided documentation.