DMP1245UFCL-7

$0.72

Description：MOSFET P-CH 12V 6.6A X1-DFN1616
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:25dcd90bb447 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 6.6A X1-DFN1616
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：29mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26.1 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1357.4 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：613mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1616-6 (Type E)
Package / Case：6-PowerUFDFN

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DMP1245UFCL-7

Overview

The DMP1245UFCL-7 is a 12V P-channel enhancement mode MOSFET in an X1-DFN1616-6 package. It features a maximum drain-source voltage of -12V and a gate-source voltage rating of ±8V. The device offers low on-resistance, with a maximum RDS(on) of 29mΩ at VGS = -4.5V and ID = -4A, or 45mΩ at VGS = -2.5V and ID = -3.5A. Continuous drain current reaches -6.6A at +25°C ambient temperature. Total power dissipation is rated at 613mW under standard conditions. The component includes an integrated gate protection diode rated for 3kV ESD.

Feature Summary

Low on-resistance minimizes conduction losses
Typical off-board profile of 0.5mm suited for thin applications
PCB footprint of 2.56mm²
3kV ESD protected gate

Applications

Battery disconnect switch
Load switch for power management functions

Procurement Notes

Verify the specific ordering suffix '-7' to confirm reel size, tape width, and quantity per reel specifications. Ensure compliance with RoHS 2 and AEC-Q101 standards if required by the target application environment. Confirm that the X1-DFN1616-6 package dimensions align with the design layout constraints.

Selection Notes

Select this component when space efficiency and thermal performance are critical due to its compact 2.56mm² footprint. Consider the low RDS(on) values for applications requiring minimal conduction loss. Verify that the -12V breakdown voltage and ±8V gate ratings match the system's electrical requirements.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel MOSFETs designed for portable electronics. It utilizes the X1-DFN1616-6 package to provide high performance in a thermally efficient form factor. The device is qualified to AEC-Q101 standards, indicating suitability for automotive and high-reliability industrial applications.