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Product Detailed Parameters
- Description：MOSFET P-CH 20V 60A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：585 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：12826 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMP2002UPS-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -60A at TC = +25°C. The device offers low on-resistance (RDS(ON)) values of 1.9mΩ at VGS = -10V, 2.4mΩ at VGS = -4.5V, and 3.8mΩ at VGS = -2.5V. Total gate charge (Qg) is 476nC at VGS = -10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package profile under 1.1mm for thin applications
- Low RDS(ON) minimizes on-state power losses
- High conversion efficiency with superior switching performance
- Qualified to AEC-Q101 standards for high reliability
Applications
- Notebook battery power management
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product standards. Ensure compatibility with J-STD-020 moisture sensitivity level 1 requirements during storage and handling.
Selection Notes
Select this component for designs requiring a compact footprint with a maximum height of 1.1mm. Evaluate thermal resistance parameters against the expected duty cycle and ambient conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider avalanche energy ratings if inductive load switching is present.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 (Type K) case style, which provides a molded plastic construction with UL flammability classification rating 94V-0. The terminal finish consists of matte tin annealed over a copper leadframe.
Replacement Considerations
Cross-reference pin configurations and electrical limits when substituting. Verify that alternative components support the same -20V BVDSS and -60A ID ratings within the PowerDI5060-8 package dimensions.
FAQ
What is the maximum junction temperature for the DMP2002UPS?
The operating and storage temperature range extends up to a maximum junction temperature of +150°C.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage exhibits variation across the ambient temperature range, as detailed in the typical transfer characteristic graphs provided in the datasheet.
