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Product Detailed Parameters
- Description：MOSFET P-CH 20V 150A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：177 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：8352 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMP2003UPS-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an 8-pin PowerDI5060 surface-mount package. It features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -150A at +25°C case temperature. The device exhibits a maximum on-resistance (RDS(ON)) of 2.2mΩ at VGS=-10V/-25A, 2.55mΩ at VGS=-4.5V/-20A, and 4.0mΩ at VGS=-2.5V/-15A. Total gate charge (Qg) is 177nC at VGS=-10V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060 package design for cooler running applications
- Low RDS(ON) characteristics to minimize on-state power losses
- Ultra-thin profile under 1.1mm suitable for space-constrained designs
- RoHS compliant with lead-free finish and halogen/antimony-free materials
Applications
- Notebook battery power management systems
- General purpose load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS directives and is free of halogens and antimony if environmental compliance is required for the target assembly. Ensure the procurement documentation matches the manufacturer's official datasheet specifications.
Selection Notes
Select this component when high current handling up to 150A is required within a low-profile footprint. Evaluate thermal resistance parameters based on the specific PCB copper area and mounting conditions, as dissipation capabilities vary significantly between ambient and case-referenced scenarios. Verify gate drive voltages align with the specified thresholds for optimal conduction performance.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides a compact solution for high-current applications. The device represents a newer generation designed to balance low on-resistance with superior switching performance compared to previous iterations.
Replacement Considerations
Consult Diodes Incorporated or authorized distributors for confirmed substitute part numbers. Do not assume functional equivalence with other generic P-channel MOSFETs without verifying pinout compatibility, voltage ratings, and thermal characteristics against the original datasheet.
FAQ
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current of -350A with a 10μs pulse duration and 1% duty cycle.
How does the on-resistance change with junction temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the datasheet.
