DMP2004K-7

$0.25

Description：MOSFET P-CH 20V 600MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b3d297fe8a8f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 600MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：550mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2004K-7

Overview

The DMP2004K-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT-23 package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -600mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 0.9Ω maximum at VGS = -4.5V and ID = -430mA, and 2.0Ω maximum at VGS = -1.8V and ID = -150mA. The gate threshold voltage (VGS(TH)) is -1.0V maximum at ID = -250µA. Total power dissipation is 550mW with a thermal resistance junction-to-ambient of 227°C/W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Very low gate threshold voltage below 1V
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and halogen-free requirements if environmental specifications are critical for the intended assembly process. Ensure the selected variant aligns with the required automotive qualification standards if applicable.

Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with low on-resistance and fast switching capabilities. The device is suitable for power management circuits where low gate drive voltage is beneficial. Consider the thermal resistance and power dissipation limits when designing for ambient temperatures up to 150°C. Verify that the -20V breakdown voltage meets the system's voltage requirements.

Part Context

The DMP2004K is part of Diodes Incorporated's portfolio of P-channel enhancement mode MOSFETs designed for high-efficiency applications. This generation of devices minimizes on-state resistance while maintaining superior switching performance. The product line includes variants such as the DMP2004KQ, which is qualified for automotive applications under AEC-Q101 standards.