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Product Detailed Parameters
- Description：MOSFET P-CH 20V 430MA SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMP2004TK-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -430 mA at +25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate-source voltage (VGSS) rating of ±8 V, a maximum static on-resistance (RDS(ON)) of 1.6 Ω at VGS = -1.8V and ID = -150mA, and an input capacitance (Ciss) of 47 pF. It is housed in a SOT523 surface-mount package.
Feature Summary
- Totally lead-free and fully RoHS compliant with halogen and antimony free construction
- Qualified to AEC-Q101 standards for high reliability automotive applications
- Features ESD protected gate structure
- Low on-resistance and low gate threshold voltage design
Applications
- Power management circuits requiring small form factor
- Battery protection systems
- Load switch applications
- General purpose switching
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required environmental standards, including RoHS 3 compliance and the specified halogen and antimony limits. Ensure the selected variant matches the exact SOT523 package dimensions and marking codes defined in the official datasheet DS30932.
Selection Notes
Select this component when a compact P-channel MOSFET with a -20 V rating is required. The SOT523 package offers a minimal footprint suitable for space-constrained designs. Consider the RDS(ON) specifications across different gate voltages (-1.8V, -2.5V, -4.5V) to ensure compatibility with the available drive signals. Verify thermal performance requirements against the provided junction-to-ambient thermal resistance values.
Part Context
This part belongs to the DMP2004 series of P-channel MOSFETs from Diodes Incorporated. The series includes variants such as DMP2004WK and DMP2004LVT, which may differ in package type or specific electrical characteristics. The DMP2004TK specifically utilizes the SOT523 case style. All parts in this family share the core enhancement mode technology optimized for low power consumption and fast switching speeds.
Replacement Considerations
Check for direct substitutes like the DMP2004WK if package differences are acceptable. Verify pinout compatibility and electrical parameter overlaps before substituting any other P-channel MOSFET.
