DMP2004TK

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:33bce2284caf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.97 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：230mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Download product information

DMP2004TK

Overview

The DMP2004TK is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of -20V and a gate-source voltage (VGSS) rating of ±8V. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a maximum static drain-source on-resistance (RDS(ON)) of 1.3Ω at VGS = -4.5V and ID = -430mA, and a gate threshold voltage (VGS(TH)) ranging from -0.5V to -1.0V. The component utilizes an SOT523 surface-mount package.

Feature Summary

Totally lead-free and fully RoHS compliant with halogen and antimony-free green device construction.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Features ESD protected gate structure for enhanced circuit robustness.

Applications

Power management circuits requiring low on-resistance switching.
Battery-powered devices utilizing the low gate threshold voltage.
Automotive electronic systems meeting AEC-Q101 reliability requirements.

Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration, as standard tape and reel quantities are specified in the manufacturer documentation. Confirm compliance with current environmental directives such as RoHS 3 and REACH status before finalizing procurement specifications. Ensure the source channel is authorized to prevent counterfeit components.

Selection Notes

Select this component when a compact SOT523 footprint is required for P-channel switching applications. Evaluate the thermal resistance parameters against the expected duty cycle and ambient temperature conditions. Consider the low gate threshold voltage suitability for logic-level control interfaces and the AEC-Q101 qualification if automotive grade reliability is mandated.

Part Context

This part belongs to the DMP2004 series of P-channel MOSFETs designed for general-purpose switching. The 'TK' designation indicates the specific SOT523 case style and associated packaging format. It serves as a compact alternative to larger packages while maintaining comparable electrical performance metrics for low-voltage power management tasks.

Replacement Considerations

Consult official substitution lists or cross-reference databases for verified equivalents. Verify pinout compatibility and ensure replacement parts meet identical voltage, current, and thermal ratings.