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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V PowerDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：3840 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2004UFG-13 is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -20V drain-source voltage rating and an ultra-low on-state resistance of 3.0mΩ at VGS = -10V, enabling a continuous drain current of -115A at +25°C case temperature. The device utilizes the PowerDI3333-8 package to minimize board area while maintaining thermal efficiency.
Feature Summary
- Minimizes on-state resistance to reduce conduction losses
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packing configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and halogen-free requirements for your specific manufacturing environment before finalizing procurement.
Selection Notes
Select this component when low RDS(ON) is critical for minimizing power dissipation in high-current applications. Ensure the gate drive voltage aligns with the specified thresholds (-10V, -4.5V, or -2.5V) to achieve the desired current handling capabilities. Verify that the PCB layout supports the exposed drain pad for optimal thermal performance.
Part Context
This part belongs to Diodes Incorporated's P-channel MOSFET portfolio, specifically engineered for compact power switching solutions. The PowerDI3333-8 package represents a significant reduction in footprint compared to traditional surface-mount packages like SO-8, facilitating denser circuit board designs without compromising thermal management capabilities.
Replacement Considerations
Consult official documentation for direct substitutes. Cross-referencing requires matching the -20V rating, P-channel type, and PowerDI3333-8 package dimensions.
