DMP2004WK-7

$0.47

Description：MOSFET P-CH 20V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4b1761c42b06 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP2004WK-7

Overview

The DMP2004WK-7 is a P-channel enhancement mode MOSFET in an SOT323 surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -400 mA. The device exhibits low on-resistance, with typical values ranging from 0.7 Ω to 1.7 Ω depending on gate drive conditions. Key electrical parameters include a gate threshold voltage below 1 V, input capacitance of 175 pF, and total power dissipation of 250 mW. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for efficient power handling
Very low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

Battery protection circuits
Power management systems
Load switch applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration as documented. Confirm that the component meets AEC-Q101 qualification standards if automotive reliability requirements are necessary for the target application environment.

Selection Notes

Select this component when a compact SOT323 footprint is required for P-channel switching. Ensure the design accommodates the specified thermal resistance and power dissipation limits under expected ambient operating temperatures and load conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for portable electronics. The SOT323 case provides a minimal board space solution compared to larger packages while maintaining robust electrical performance for low-voltage switching tasks.

Replacement Considerations

Consult official substitution lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics against the original datasheet specifications.