DMP2005UFG-13

$1.08

Description：MOSFET P-CH 20V 89A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f950df8867b4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 89A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：4mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：4670 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP2005UFG-13

Overview

The DMP2005UFG-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -20 V and a maximum continuous drain current (I_D) of -89 A at +25°C case temperature. The device achieves a low on-state resistance (R_DS(ON)) of 4.0 mΩ at V_GS = -4.5 V and 6.5 mΩ at V_GS = -2.5 V. Total gate charge is 55 nC at V_GS = -4.5 V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Minimized on-state resistance for high-efficiency power management applications
Thermally efficient PowerDI® package occupies only 33% of the board area compared to SO-8
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMP2005UFG-7 with a 2,000-unit tape and reel packaging quantity. The requested model includes the -13 suffix, which indicates a 3,000-unit tape and reel packaging quantity. Confirm that the supplier inventory matches this exact reel size to ensure correct procurement.

Selection Notes

Select this component for designs requiring high current handling within a compact footprint. The device supports logic-level gate drive voltages down to -2.5 V while maintaining low conduction losses. Ensure the PCB layout utilizes the exposed drain pad for thermal dissipation to achieve the rated current capacity.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package, designed to provide superior switching performance alongside minimized on-state resistance. The product is lead-free, RoHS compliant, and halogen-free.

Replacement Considerations

DMP2005UFG-7

FAQ

What is the difference between the DMP2005UFG-7 and DMP2005UFG-13?

Both parts share identical electrical characteristics and package type. The distinction lies solely in the packaging quantity: the -7 suffix denotes a 2,000-unit tape and reel, while the -13 suffix denotes a 3,000-unit tape and reel.