ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 17.5A POWERDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：7500 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMP2006UFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 40 A. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 9 mΩ at a gate-source voltage (Vgs) of -10 V, a gate charge (Qg) of 156 nC, and a threshold voltage (Vgs(th)) of 400 mV. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 41 W.
Feature Summary
- High current handling capability with a 40 A continuous drain current rating.
- Low on-resistance design for efficient power switching applications.
- Robust thermal performance supporting operation up to 150 °C junction temperature.
Applications
- Power distribution circuits
- Load switch implementations
- DC-DC converter output stages
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the PowerDI3333-8 package dimensions match your PCB footprint requirements. Ensure compatibility with the intended gate drive voltage levels for optimal Rds(on) performance. Check for any recent product change notifications regarding manufacturing site or material composition updates.
Selection Notes
Select this component for applications requiring high current density in a compact surface-mount form factor. The low Rds(on) minimizes conduction losses, improving overall system efficiency. Verify that the 20 V voltage rating provides sufficient headroom for the specific circuit operating conditions. Consider the thermal management requirements given the 41 W power dissipation rating in the specified package.
Part Context
This part belongs to the DMP20 series of P-channel MOSFETs from Diodes Incorporated. These devices are designed for general-purpose power switching applications where space constraints and efficiency are critical. The PowerDI packaging offers improved thermal performance compared to traditional SOT packages while maintaining a small footprint suitable for dense PCB layouts.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains equivalent Vds, Id, and Rds(on) specifications. Verify package compatibility if mechanical constraints exist. Confirm that thermal characteristics and switching speeds meet the original design requirements.
