DMP2006UFGQ-13

$1.23

Description：MOSFET P-CH 20V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b0b41fbbe216 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：7500 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP2006UFGQ-13

Overview

The DMP2006UFGQ-13 is a 20V P-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of -20V and a continuous drain current of -40A at case temperature +25°C. The device exhibits a typical on-resistance of 4.2mΩ at VGS = -4.5V and ID = -15A, with a maximum of 5.5mΩ under the same conditions. At VGS = -2.5V and ID = -10A, the on-resistance is typically 5.4mΩ with a maximum of 7.5mΩ. Total gate charge is typically 64nC at VGS = -4.5V.

Feature Summary

Qualified to AEC-Q101 standards for high reliability automotive applications
PPAP capable for automotive supply chain requirements
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The -13 suffix indicates a tape and reel quantity of 3,000 units. Confirm that the component meets all necessary automotive qualification standards and PPAP requirements for the intended application environment before finalizing procurement.

Selection Notes

Select this component for designs requiring low on-resistance in a compact form factor. The PowerDI3333-8 package occupies only 33% of the board area compared to SO-8 packages. Ensure the design accounts for thermal resistance values and junction temperature limits when determining power dissipation capabilities.

Part Context

This part belongs to Diodes Incorporated's DMP series of P-channel MOSFETs. It utilizes the PowerDI3333-8 surface mount package designed for thermally efficient operation. The device is manufactured using silicon technology and is intended for general power switching applications within specified voltage and current limits.

Replacement Considerations

DMP2006UFGQ-7 is an alternative version from the same manufacturer with identical electrical characteristics but packaged in a 2,000-unit tape and reel.