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The DMP2006UFGQ-7 is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and operates with a drain-source voltage of -20V. The device supports a continuous drain current of -40A at case temperature +25°C, with a maximum on-resistance of 5.5mΩ at VGS = -4.5V. It features an operating junction temperature range from -55°C to +150°C and is qualified to AEC-Q101 standards for automotive reliability.
Verify that the specific ordering suffix matches the required packaging quantity, as the datasheet lists distinct part numbers for different reel sizes. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's documentation before finalizing procurement specifications.
Select this component when designing circuits requiring low on-resistance within a highly space-constrained footprint. Ensure the gate drive voltage meets the minimum threshold for optimal performance, particularly if operating under varying temperature conditions or demanding high continuous current loads.
This component belongs to the DMP series of power MOSFETs designed specifically for automotive environments. It integrates advanced silicon technology into a lead-free, green molding compound package, offering enhanced durability and thermal management capabilities suitable for rigorous industrial and vehicular electronic systems.
Direct substitutes include the DMP2006UFGQ-13 variant, which shares identical electrical characteristics but differs in tape and reel packaging quantities.