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Product Detailed Parameters
- Description：MOSFET P-CH 20V 14A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：8mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：6909 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP2008UFG-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 surface-mount package. It features a drain-source voltage (VDSS) of -20V and a maximum continuous drain current (ID) of -14A at +25°C ambient temperature. The device offers low on-state resistance (RDS(ON)), specified as 8mΩ at VGS = -4.5V and ID = -12A, or 9.8mΩ at VGS = -2.5V and ID = -10A. Total gate charge (Qg) is typically 72nC at VGS = -4.5V. Thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3.0°C/W and a total power dissipation (PD) of 41W when mounted on a case at +25°C.
Feature Summary
- Low RDS(ON) ensures minimized on-state losses for high efficiency
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Qualified to AEC-Q101 standards for High Reliability
Applications
- Load Switch
- Power Management Functions
Procurement Notes
Verify the ordering suffix matches the required reel quantity; the -13 suffix indicates a 3000-unit tape and reel packaging format. Confirm that the application environment remains within the specified operating temperature range of -55°C to +150°C. Ensure PCB layout adheres to the recommended pad dimensions provided in the datasheet to achieve the guaranteed thermal performance and electrical characteristics.
Selection Notes
Select this component for applications requiring a compact P-channel switch with low conduction losses at 20V. Consider the specific gate drive voltage available in your circuit, as RDS(ON) varies significantly between -1.5V, -2.5V, and -4.5V logic levels. Evaluate the thermal management requirements based on the calculated power dissipation and the specific mounting conditions on the FR-4 substrate.
Part Context
This part belongs to the DMP series of P-channel MOSFETs designed for power management. It utilizes the POWERDI3333-8 package, which provides a small footprint while maintaining robust thermal capabilities compared to standard SO-8 packages. The device is manufactured using silicon technology and is fully RoHS compliant, halogen-free, and antimony-free.
Replacement Considerations
Direct substitutes must match the -20V VDSS rating, similar RDS(ON) values at the intended gate drive voltage, and the POWERDI3333-8 package. Verify pinout compatibility, specifically the source and drain configurations, before implementation.
