DMP2010UFG-13

$0.26

Description：MOSFET P-CH 20V 12.7A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:501d12ca23e7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 12.7A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：12.7A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：103 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP2010UFG-13

Overview

The DMP2010UFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum continuous drain current of -40A at +25°C case temperature. The device achieves low on-state resistance, specified as 9.5mΩ at VGS = -4.5V and 12.5mΩ at VGS = -2.5V. It utilizes the PowerDI3333-8 surface-mount package, which provides thermal efficiency in a compact footprint.

Feature Summary

Low RDS(ON) minimizes on-state power losses for high-efficiency applications
PowerDI3333-8 package offers thermally efficient performance in a small form factor
Occupies significantly less board area compared to traditional SO-8 packages

Applications

Load switches
Power management functions

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS directives and check for automotive qualification requirements if applicable to the target design environment.

Selection Notes

Evaluate the gate threshold voltage range against the available control logic levels. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the package dimensions align with the intended PCB layout constraints and soldering processes.

Part Context

This component belongs to the DMP2010 series of P-channel MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring high efficiency and superior switching performance within a compact physical footprint.