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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1686 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP2012UFDE-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and a low on-state resistance (RDS(ON)) of 9mΩ at VGS = -4.5V, or 12mΩ at VGS = -2.5V. The device supports a continuous drain current (ID) of -14A at TA = +25°C with VGS = -4.5V, and -12A at VGS = -2.5V. It utilizes a U-DFN2020-6 (Type E) package.
Feature Summary
- Low gate threshold voltage for efficient switching
- Minimized on-state resistance to reduce conduction losses
- ESD protected gate structure
- Lead-free finish compliant with RoHS standards
Applications
- General purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable regulatory requirements for your target market. Ensure compatibility with standard surface mount assembly processes and verify thermal management requirements during integration.
Selection Notes
Select this component for applications requiring high-efficiency power management within a 20V system. Evaluate the thermal resistance characteristics relative to the intended PCB layout and copper area. Consider the gate charge parameters when designing drive circuits to optimize switching performance and minimize transition losses.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with superior switching capabilities. The series targets compact designs where space constraints and efficiency are critical factors in power distribution systems.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.
