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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1710 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2016UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -9.5A at +25°C. The device achieves a low on-state resistance of 15mΩ at VGS = -4.5V and 19mΩ at VGS = -2.5V. It utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile and a 4mm² PCB footprint.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features an ESD protected gate structure to enhance reliability during handling and operation.
- Constructed with a 0.6mm low-profile case ideal for space-constrained designs.
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official Diodes documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental directives and quality standards required for the intended end-use application before finalizing procurement.
Selection Notes
Select this component when a low-profile P-channel MOSFET with high current capability is required. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance. Verify thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for compact surface-mount applications requiring efficient power switching. The U-DFN2020-6 package provides a balance of electrical performance and mechanical footprint suitable for modern electronics.
Replacement Considerations
Consult official Diodes documentation or authorized distributors for confirmed equivalent part numbers. Do not substitute without verifying pinout compatibility, voltage ratings, and thermal characteristics.
FAQ
What is the maximum pulsed drain current for the DMP2016UFDF-7?
The maximum pulsed drain current is -70A, measured with a 10μs pulse duration and a 1% duty cycle.
Is the DMP2016UFDF-7 qualified for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.
