DMP2021UFDE-13

$0.14

Description：MOSFET P-CH 20V 11.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2ffe6b05490d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 11.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 8 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP2021UFDE-13

Overview

The DMP2021UFDE-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) package. It features a drain-source voltage of -20V and a maximum continuous drain current of -9.0A at +25°C. The device offers a low on-resistance of 16mΩ at VGS = -4.5V and 22mΩ at VGS = -2.5V. Thermal characteristics include a junction-to-ambient resistance of 165°C/W steady state. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Ultra-low profile design with a 0.6mm height suitable for space-constrained applications
Optimized for high efficiency power management through minimized on-state resistance
Integrated gate protection diode for enhanced reliability
Fully lead-free and RoHS compliant construction

Applications

Battery Management Systems
DC-DC Converters
General Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the U-DFN2020-6 (Type E) mechanical dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your expected operating conditions.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for 20V systems. The U-DFN2020-6 package provides a small footprint ideal for portable electronics. Consider the gate threshold voltage range and total gate charge if driving speed is critical. Verify compatibility with your system's voltage levels and thermal dissipation capabilities.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel enhancement mode MOSFETs designed for high-efficiency applications. The DMP2021UFDE specifically targets battery management and DC-DC conversion where size and performance are paramount. It utilizes silicon technology within a molded plastic case classified as UL 94V-0 flammability rating.

Replacement Considerations

Consult official Diodes Incorporated documentation for qualified substitutes. Cross-referencing requires matching electrical parameters such as -20V BVDSS, RDS(ON) limits, and U-DFN2020-6 package dimensions. Verify pinout compatibility and thermal characteristics before implementation.