DMP2021UFDE-7

$0.71

Description：MOSFET P-CH 20V 11.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2d53dc1bfd59 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 11.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 8 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

Download product information

DMP2021UFDE-7

Overview

The DMP2021UFDE-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -20V and a low on-state resistance (RDS(ON)) of 16mΩ at VGS = -4.5V, rising to 22mΩ at VGS = -2.5V. The device supports a continuous drain current (ID) of -9.0A at +25°C ambient temperature. Packaged in a U-DFN2020-6 (Type E) case with a 0.6mm profile, it includes an integrated gate protection diode.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance for high efficiency power management applications.
Integrated ESD protected gate structure enhances reliability against electrostatic discharge events.
0.6mm maximum profile height makes the component suitable for space-constrained low profile electronic designs.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the specific ordering suffix matches the required packaging quantity, as the datasheet lists distinct part numbers for different tape and reel lengths. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 20V P-channel switching applications. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal dissipation capabilities based on the intended PCB copper area and operating ambient temperature conditions.

Part Context

This component belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the U-DFN2020-6 package type, which provides a compact footprint suitable for modern surface mount assembly processes. The device is designed to offer a balance between low static resistance and dynamic switching characteristics.

Replacement Considerations

Consult official Diodes Incorporated documentation or authorized distributors for verified equivalent part numbers. Do not substitute with generic alternatives without confirming pinout compatibility, electrical ratings, and package dimensions match the original design requirements.