DMP2021UFDF-13

$0.21

Description：MOSFET P-CH 20V 9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5dfd4c602d71 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP2021UFDF-13

Overview

The DMP2021UFDF-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (V(BR)DSS) of -20V and a maximum continuous drain current (ID) of -9.0A at +25°C. The device exhibits a low on-resistance (RDS(ON)) of 16mΩ at VGS = -4.5V and 22mΩ at VGS = -2.5V. Total gate charge (Qg) is 34nC at VGS = -4.5V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
Features a 0.6mm profile ideal for low-profile applications with a compact PCB footprint of 4mm².
Includes an ESD protected gate structure to enhance reliability during handling and operation.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets JEDEC standards for high reliability as stated in the datasheet. Ensure compatibility with the specified U-DFN2020-6 mechanical dimensions and soldering requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a low-profile P-channel MOSFET with high current capability. The -20V rating suits low-voltage power rails. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate threshold voltage aligns with the driving logic levels of the control circuitry for optimal switching efficiency.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the U-DFN2020-6 case type. The product is designed to meet environmental directives including RoHS and is classified as a 'Green' device due to being halogen and antimony free.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Consult the manufacturer's automotive products listing for compatible alternatives meeting IATF 16949 certified facility standards.