DMP2033UVT-7

$0.47

Description：MOSFET P-CH 20V 4.2A TSOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:726e0cae9278 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 4.2A TSOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：65mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：845 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2033UVT-7

Overview

The DMP2033UVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It features a drain-source voltage of -20V and a continuous drain current of -4.2A at +25°C. The device exhibits a maximum on-resistance of 65mΩ at VGS = -4.5V and 100mΩ at VGS = -2.5V. Key electrical parameters include an input capacitance of 845pF, total gate charge of 10.4nC, and a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability.
Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction.

Applications

Backlighting
Power Management Functions
DC-DC Converters
Motor Control

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental compliance requirements for the intended market. Ensure the datasheet revision aligns with the manufacturing date code on the received units. Cross-reference the pin-out diagram with the PCB layout to prevent installation errors.

Selection Notes

Select this component when a low on-resistance P-channel MOSFET is required for efficient power switching. Consider the thermal resistance and power dissipation limits relative to the expected operating ambient temperature. Evaluate the gate threshold voltage compatibility with the driving logic levels to ensure reliable turn-on and turn-off characteristics within the circuit design.

Part Context

This part belongs to the DMP2033 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 surface mount case constructed from molded plastic with a matte tin finish on copper leadframes. The device is designed for general purpose switching applications requiring compact form factors and robust electrical performance.

Replacement Considerations

DMP2033UVT-13 is a verified substitute offering identical electrical specifications but packaged in a 10000-unit tape and reel format instead of the standard 3000-unit reel.