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Product Detailed Parameters
- Description：MOSFET P-CH 20V 8.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：8.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：29mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.03W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2035UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) surface-mount package with a maximum drain-source voltage of -20V and a continuous drain current of -6.9A at +25°C. The device exhibits a low on-resistance of 29mΩ at VGS = -4.5V and 39mΩ at VGS = -2.5V. Total power dissipation reaches 2.03W on an FR-4 substrate with a copper plate, while the junction-to-ambient thermal resistance is 63°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Ultra-low profile construction with a maximum height of 0.6mm for space-constrained designs
- Minimized on-state resistance combined with superior switching performance for high efficiency
- ESD protected gate structure integrated with a protection diode
- Totally lead-free and fully RoHS compliant with halogen and antimony free green device characteristics
Applications
- Battery management systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify that the specific part number suffix matches the required packaging quantity, as the -7 suffix indicates a 3,000-unit tape and reel configuration. Confirm compliance requirements against relevant directives such as RoHS 2 and RoHS 3. Ensure the procurement channel is authorized to prevent counterfeit components. Review automotive qualification standards if AEC-Q100/101 or PPAP capabilities are necessary for the target application environment.
Selection Notes
Select this component when a compact footprint and low thermal resistance are critical for power density. The U-DFN2020-6 package provides a small PCB area of 4mm². Evaluate the gate threshold voltage and total gate charge parameters to ensure compatibility with the intended driver circuitry. Consider the thermal derating curves for applications operating above +25°C ambient temperature to maintain safe junction temperatures.
Part Context
This device belongs to the DMP2035UFDF series of P-channel enhancement mode MOSFETs. It utilizes a U-DFN2020-6 case type designed for surface mounting. The product line emphasizes minimizing on-state resistance while maintaining robust switching characteristics suitable for modern power management architectures.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes qualified to AEC-Q100/101/200 standards.
