DMP2036UVT-7

$0.11

Description：MOSFET P-CH 20V 6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6afb3f4ca93b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：30mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2036UVT-7

Overview

The DMP2036UVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum continuous drain current of -6.0A at +25°C ambient temperature. The device exhibits a low on-resistance of 30mΩ at VGS = -4.5V and ID = -6.4A, or 39mΩ at VGS = -2.5V and ID = -4.8A. It operates within a junction temperature range of -55°C to +150°C and is housed in a TSOT26 surface-mount package.

Feature Summary

Low input capacitance for efficient switching performance
Low on-resistance to minimize conduction losses
Fast switching speed capabilities
ESD protected structure

Applications

DC-DC Converters
Motor Control
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets RoHS compliance standards and lead-free requirements as specified by the manufacturer. Ensure the thermal management design accounts for the stated power dissipation limits under intended operating conditions.

Selection Notes

Select this component when a P-channel MOSFET with a -20V breakdown voltage and high current handling capability is required. Consider the low on-resistance characteristics for applications prioritizing efficiency. Evaluate the TSOT26 package dimensions against available PCB space constraints.

Part Context

This part belongs to the DMP2036UVT series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide superior switching performance while maintaining low on-state resistance. The device is suitable for various power management applications requiring reliable operation across a wide temperature range.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with similar voltage ratings (-20V) and current capabilities (approx. 6A). Verify pinout compatibility and package dimensions (TSOT26) before substitution. Ensure electrical parameters like RDS(ON) and gate charge meet or exceed original specifications.