DMP2036UVTQ-13

$0.10

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:59c31821e00a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：30mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP2036UVTQ-13

Overview

The DMP2036UVTQ is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum on-resistance of 30mΩ at VGS = -4.5V. The device supports a continuous drain current of -6.0A at +25°C and dissipates up to 1.1W of power. Packaged in a TSOT26 surface-mount housing, it includes an integrated gate protection diode and meets AEC-Q101 automotive qualification standards.

Feature Summary

Low input capacitance for fast switching performance
Integrated ESD protection with gate protection diode
Automotive-grade reliability via AEC-Q101 qualification
Lead-free and fully RoHS compliant construction

Applications

DC-DC converters
Motor controls
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity before procurement. Confirm that the TSOT26 package dimensions align with the target PCB footprint. Ensure the design accounts for the thermal resistance values provided in the datasheet to maintain junction temperatures within the specified operating range during operation.

Selection Notes

Select this component when a low-voltage P-channel switch is required for high-efficiency applications. The TSOT26 package offers a compact solution suitable for space-constrained designs. Consider the -20V breakdown voltage limit and the specific RDS(ON) requirements at the intended gate drive voltage to ensure optimal conduction losses and switching speeds are achieved.

Part Context

This part belongs to the DMP2036 series of P-channel MOSFETs from Diodes Incorporated. It shares core electrical characteristics with variants such as the DMP2036UVT-7 but differs in packaging configuration and manufacturing compliance levels. The UVTQ designation specifically indicates automotive-grade qualification and IATF 16949 manufacturing certification.

Replacement Considerations

Direct substitutes include other DMP2036 variants like the DMP2036UVT-7, provided the package type matches the application requirements. Verify pinout compatibility and thermal performance metrics when cross-referencing with generic P-channel MOSFETs from other manufacturers.