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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：28mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 8 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：803 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2037U-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -6.1 A at +25°C case temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 28 mΩ at V_GS = -4.5 V and 43 mΩ at V_GS = -2.5 V. Total gate charge is 14.5 nC at V_GS = -8 V, with input capacitance of 803 pF. Thermal resistance from junction to ambient is 158 °C/W, and the operating temperature range spans -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load switch applications
- High-efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the selected variant aligns with the required automotive or industrial qualification levels if specific change control or IATF 16949 manufacturing facilities are mandated for the target application.
Selection Notes
Select this component when a compact SOT-23 footprint is required for P-channel switching duties. Evaluate the -20 V rating against system voltage peaks. Compare the 28 mΩ on-resistance at -4.5 V drive against alternative devices to ensure optimal conduction losses. Consider the thermal resistance characteristics for PCB layout planning to maintain junction temperatures within the specified operational limits during continuous operation.
Part Context
This part belongs to the DMP2037U series of P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring compact surface-mount solutions. The device utilizes a molded plastic case material classified as UL flammability rating 94V-0.
Replacement Considerations
Cross-reference with other Diodes Incorporated P-channel MOSFETs in the SOT-23 package. Verify pinout compatibility and electrical parameter overlaps before substitution.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage (V_GSS) is ±10 V.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.
