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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：28mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 8 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：803 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2037U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 surface-mount package. It features a drain-source voltage of -20V and a continuous drain current of -6.1A at +25°C case temperature. The device exhibits low on-resistance, specified as 28mΩ maximum at VGS = -4.5V and 43mΩ maximum at VGS = -2.5V. Total power dissipation is rated at 0.8W under steady-state conditions with a thermal resistance of 158°C/W. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Low on-resistance for minimized conduction losses
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load switch applications
- High-efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status before finalizing procurement. Ensure the selected variant matches the intended application requirements regarding thermal performance and electrical ratings.
Selection Notes
Select this component based on its low on-resistance characteristics suitable for minimizing power loss in high-efficiency designs. Consider the SOT-23 package constraints when evaluating thermal dissipation needs. Verify compatibility with system voltage levels and ensure the gate threshold voltage aligns with available drive signals for optimal switching performance.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered to balance low on-state resistance with superior switching capabilities. The series targets modern electronic systems requiring compact footprints and efficient power handling within small form-factor packages.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' components without validating pinouts, electrical parameters, and thermal characteristics against the original datasheet.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is rated at ±10V.
Is the device qualified for automotive applications?
For automotive applications requiring specific change control, AEC-Q qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated or their local representative.
